sot23 pnp silicon planar darlington transistors issue 2 ? march 1995 j partmarking detail ? FMMTA63 - z2u fmmta64 - z2v complementary types ? FMMTA63 - fmmta13 fmmta64 - fmmta14 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -10 v peak pulse current i cm -800 ma continuous collector current i c -500 ma peak base current i bm -200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol FMMTA63 fmmta64 unit conditions. min. max. min. max. collector-base breakdown voltage v (br)cbo -30 -30 v i c =-10 m a, i e =0 collector-emitter breakdown voltage v (br)ceo -30 -30 v i c =-10ma, i b =0* emitter-base breakdown voltage v (br)ebo -10 -10 v i e =-10 m a, i c =0 collector cut-off current i cbo -0.1 -0.1 m a v cb =-30v, i e =0 emitter cut-off current i ebo -0.1 -0.1 m a v ce =-10v static forward current transfer ratio h fe 5k 10k 10k 20k i c =-10ma, v ce =5v* i c =-100ma, v ce =5v* collector-emitter saturation voltage v ce(sat) -1.5 -1.5 v i c =-100ma, i b =-0.1ma* base-emitter saturation voltage v be(sat) -2.0 -2.0 v i c =-100ma, i b =-0.1ma* transition frequency f t 125 125 mhz i c =-50ma, v ce =-5v f=20mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fzta63 datasheet. FMMTA63 fmmta64 3 - 178 c b e sot23
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